Karakteristik Struktur Kristal In2Se3 Hasil Preparasi Dengan Metode Bridgman

Apart from using silicon material, thin-layer solar cells can be made various types of semiconductor materials, such as a combination groups III and VI. In cell applications, these materials are usually used n-type coatings. This study not only aimed to determine the crystal structure effect annealing temperature on lattice parameters but also chemical composition surface morphological crystals formed preparation. The growth process was carried out Bridgman method with different heating patterns. in both temperatures is 200oC 250oC. physical properties prepared In2Se3 were characterized XRD, SEM, EDAX. XRD Characterization structure, while SEM EDAX characterization morphology crystals. result showed that polycrystals hexagonal structure. Based diffractogram obtained, crystalline 1 has better quality. analysis composed elements Se mole ratio 2:9, color homogeneous.